GeCu Thin Films for Inorganic Write-Once Media

Author

Wu, T.H. ; Kuo, P.C. ; Tsai, E.F. ; Chiang, D.Y. ; Tang, W.T. ; Jeng, T.R. ; Cheng, R.P. ; Hsu, W.C. ; Huang, D.R. ; Chen, S.C.

Author_Institution

Inst. of Mater. Sci. & Eng., Nat. Taiwan Univ., Taipei

Volume

43

Issue

2

fYear

2007

Firstpage

856

Lastpage

858

Abstract

The Ge_100-xCu_x thin films (x=50 at.%-69 at.%) were deposited on nature oxidized Si (100) wafer by dc co-sputtering of Ge and Cu targets. Microstructures was analyzed by X-ray diffractometer. The optical and thermal properties were measured from static test. It was found that the as-deposited phase was single supersaturated epsiv-Cu₃Ge phase and it was transformed to Ge and epsiv-Cu₃Ge coexisting phases after annealing at 400degC. The reflectivity of as-deposited film was higher than that of annealed film

Keywords

X-ray diffraction; annealing; copper compounds; germanium alloys; optical fabrication; optical films; reflectivity; solid-state phase transformations; sputtered coatings; storage media; write-once storage; 400 degC; Ge_100-xCu_x; X-ray diffraction; annealing; dc cosputtering; inorganic write once media; microstructures; phase transformation; reflectivity; single supersaturated epsiv-Cu₃Ge phase; thin films; Annealing; Microstructure; Optical diffraction; Optical films; Reflectivity; Semiconductor thin films; Sputtering; Testing; Transistors; X-ray diffraction; GeCu; inorganic optical recording media; write-once;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2006.888463

Filename

4069089