Title :
Processing of unipolar diodes with electron beams
Author :
McMillan, G.B. ; Shannon, John M. ; Ahmed, Hameeza
Author_Institution :
University of Cambridge, Engineering Department, Cambridge, UK
Abstract :
Low-energy ion implantation and multiple-scan electron-beam annealing have been used to produce bulk unipolar camel diodes and Schottky diodes with a range of barrier heights. Optimisation of results required precise doping and diffusion control.
Keywords :
Schottky-barrier diodes; annealing; electron beam applications; ion implantation; semiconductor diodes; Schottky diodes; barrier heights; camel diodes; diffusion control; doping control; electron-beam annealing; low energy ion implantation; unipolar diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840586
