• DocumentCode
    995015
  • Title

    Processing of unipolar diodes with electron beams

  • Author

    McMillan, G.B. ; Shannon, John M. ; Ahmed, Hameeza

  • Author_Institution
    University of Cambridge, Engineering Department, Cambridge, UK
  • Volume
    20
  • Issue
    21
  • fYear
    1984
  • Firstpage
    863
  • Lastpage
    865
  • Abstract
    Low-energy ion implantation and multiple-scan electron-beam annealing have been used to produce bulk unipolar camel diodes and Schottky diodes with a range of barrier heights. Optimisation of results required precise doping and diffusion control.
  • Keywords
    Schottky-barrier diodes; annealing; electron beam applications; ion implantation; semiconductor diodes; Schottky diodes; barrier heights; camel diodes; diffusion control; doping control; electron-beam annealing; low energy ion implantation; unipolar diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840586
  • Filename
    4249097
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=995015