A technique for modelling S-parameters for HEMT structures as a function of gate bias

Author

Mahon, Simon J. ; Skellern, D.J. ; Green, Frederick

Author_Institution

Macquarie Univ., Sydney, NSW, Australia

Volume

40

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

1430

Lastpage

1440

Abstract

A physically based technique for modeling HEMT structure S-parameters is presented. The core of the model is directly dependent on the HEMT wafer structure and the physical gate length. The model accurately predicts the device´s S-parameters as a function of the applied gate bias. The physical basis facilitates the modeling of different types of HEMT structures. Measured S-parameters and simulation results over a frequency range of 1 to 25 GHz are presented for three different HEMT structures: uniformly doped, GaAs channel; pulse-doped, GaAs channel; and uniformly doped, strained InGaAs channel

Keywords

S-parameters; equivalent circuits; high electron mobility transistors; semiconductor device models; semiconductor doping; solid-state microwave devices; 1 to 25 GHz; GaAs; HEMT structures; S-parameters; gate bias; gate length; modelling; physically based technique; pulsed doped channel; strained InGaAs channel; uniformly doped channel; wafer structure; Capacitance; Electrons; Equivalent circuits; Frequency; HEMTs; Predictive models; Pulse measurements; Scattering parameters; Semiconductor device modeling; Transconductance;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.146324

Filename

146324