Title :
A technique for modelling S-parameters for HEMT structures as a function of gate bias
Author :
Mahon, Simon J. ; Skellern, D.J. ; Green, Frederick
Author_Institution :
Macquarie Univ., Sydney, NSW, Australia
fDate :
7/1/1992 12:00:00 AM
Abstract :
A physically based technique for modeling HEMT structure S-parameters is presented. The core of the model is directly dependent on the HEMT wafer structure and the physical gate length. The model accurately predicts the device´s S-parameters as a function of the applied gate bias. The physical basis facilitates the modeling of different types of HEMT structures. Measured S-parameters and simulation results over a frequency range of 1 to 25 GHz are presented for three different HEMT structures: uniformly doped, GaAs channel; pulse-doped, GaAs channel; and uniformly doped, strained InGaAs channel
Keywords :
S-parameters; equivalent circuits; high electron mobility transistors; semiconductor device models; semiconductor doping; solid-state microwave devices; 1 to 25 GHz; GaAs; HEMT structures; S-parameters; gate bias; gate length; modelling; physically based technique; pulsed doped channel; strained InGaAs channel; uniformly doped channel; wafer structure; Capacitance; Electrons; Equivalent circuits; Frequency; HEMTs; Predictive models; Pulse measurements; Scattering parameters; Semiconductor device modeling; Transconductance;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
