An analytical model of the energy distribution of hot electrons

Author

Cassi, Davide ; RiccÒ, Bruno

Author_Institution

Dept. of Phys., Parma Univ., Italy

Volume

37

Issue

6

fYear

1990

fDate

6/1/1990 12:00:00 AM

Firstpage

1514

Lastpage

1521

Abstract

An analytical model of the energy distribution of hot electrons in semiconductors is presented. It is derived under the simplifying assumptions of a single nonparabolic conduction band, small space derivative of the external electric field, and emission of optical phonons as the dominant energy loss mechanism. The model, indicating that band nonparabolicity makes the electron energy distribution deviate markedly from the Maxwellian low-field case, is shown to be applicable to the case of silicon MOSFETs by means of comparisons with Monte Carlo simulations

Keywords

high field effects; hot carriers; insulated gate field effect transistors; semiconductor device models; Monte Carlo simulations; Si MOSFETs; Si transistors; analytical model; dominant energy loss mechanism; electron energy distribution; emission of optical phonons; energy distribution; hot electrons; single nonparabolic conduction band; Analytical models; Electron optics; Energy loss; MOSFETs; Monte Carlo methods; Optical scattering; Resistance heating; Silicon; Stimulated emission; Very large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.106247

Filename

106247