DocumentCode :
995240
Title :
Reduction of quartz crystal oscillator flicker-of-frequency and white phase noise (floor) levels and acceleration sensitivity via use of multiple resonators
Author :
Driscoll, M.M.
Author_Institution :
Westinghouse Electron. Syst. Group., Baltimore, MD, USA
Volume :
40
Issue :
4
fYear :
1993
fDate :
7/1/1993 12:00:00 AM
Firstpage :
427
Lastpage :
430
Abstract :
Through the use of N series-connected quartz crystal resonators in an oscillator circuit, a 10 log N reduction in both flicker-of-frequency noise and white phase-noise (floor) levels has been demonstrated. The reduction in flicker noise occurs as a result of the uncorrelated short-term frequency instability in each of the resonators, and the reduction in noise floor level is a simple result of the increase in net, allowable crystal drive level. This technique has been used in 40-, 80-, and 100-MHz AT-, BT-, and SC-cut crystal oscillators using low flicker-of-phase noise modular amplifier sustaining stages, and four series connected crystals. Total (four crystal) power dissipations of up to 30 mW have been utilized. State-of-the-art, flicker-of-frequency noise levels have been obtained with noise-floor levels (80 MHz) as low as -180 dBc/Hz. Four- to five-fold reduction in acceleration sensitivities has been determined.<>
Keywords :
crystal resonators; radiofrequency oscillators; random noise; white noise; 100 MHz; 40 MHz; 80 MHz; AT-cut; BT-cut; N series-connected quartz crystal resonators; SC-cut; SiO/sub 2/; acceleration sensitivities; allowable crystal drive level; flicker-of-frequency noise; modular amplifier sustaining stages; multiple resonators; noise floor level; oscillator circuit; quartz crystal oscillator; uncorrelated short-term frequency instability; white phase noise; 1f noise; Circuit noise; Crystals; Frequency; Low-noise amplifiers; Noise level; Noise reduction; Oscillators; Phase noise; White noise;
fLanguage :
English
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-3010
Type :
jour
DOI :
10.1109/58.251295
Filename :
251295
Link To Document :
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