DocumentCode
995260
Title
The contour of an optimal field plate-an analytical approach
Author
Brieger, K.-P. ; Falck, Elmar ; Gerlach, Willi
Author_Institution
Inst. fur Werkstoffe der Elektrotech., Tech. Univ. Berlin, West Germany
Volume
35
Issue
5
fYear
1988
fDate
5/1/1988 12:00:00 AM
Firstpage
684
Lastpage
688
Abstract
An analytical relationship has been developed to calculate the field distribution at the semiconductor surface of an MOS structure with a finite rectangular metal electrode for the deep depletion mode. This relationship has been verified using two-dimensional numerical calculations. A further result of this model is a formula for the contour of an optimal field electrode
Keywords
electric fields; metal-insulator-semiconductor structures; MOS structure; analytical relationship; deep depletion mode; field distribution; finite rectangular metal electrode; model; optimal field plate; semiconductor surface; two-dimensional numerical calculations; Conductors; Dielectrics; Electrodes; Electrostatics; Helium; MOS capacitors; Numerical analysis; P-n junctions; Permittivity; Semiconductor devices;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.2513
Filename
2513
Link To Document