HEMT for low noise microwaves: CAD oriented modeling

Author

Caddemi, Alina ; Martines, Giovanni ; Sannino, Mario

Author_Institution

Dipartimento di Ingegneria Elettrica, Palermo Univ., Italy

Volume

40

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

1441

Lastpage

1445

Abstract

By means of an automatic measuring system which allows the rapid and accurate characterization of microwave transistors in terms of noise and scattering parameters simultaneously, 32 HEMTs of four manufacturers have been tested. From the experimental data so obtained the equivalent circuit of the `typical´ device which represents each transistor set has been extracted using a decomposition technique. This procedure allows the optimum fitting of the global performance by exploiting the correlation between the model elements and the measured parameters over the operating frequency range. Since the method takes into account also the noise behavior of several devices of each series, a substantial improvement of the model performance for use in (M)MIC CAD of low-noise amplifiers is obtained

Keywords

MMIC; S-parameters; circuit CAD; electron device noise; equivalent circuits; high electron mobility transistors; microwave integrated circuits; semiconductor device models; solid-state microwave devices; CAD oriented modeling; HEMT; LNA; MIC; MMIC; decomposition technique; equivalent circuit; low noise microwaves; low-noise amplifiers; noise behavior; scattering parameters; Automatic testing; Circuit noise; Circuit testing; HEMTs; Manufacturing automation; Microwave devices; Microwave measurements; Microwave transistors; Noise measurement; Scattering parameters;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.146325

Filename

146325