• DocumentCode
    995356
  • Title

    Analytical expression for the high-current I/V characteristic of a distributed diode

  • Author

    Tortelier, P. ; Arsene-Henry, P.

  • Author_Institution
    Centre National d´Etudes des Telecommunications, Bagneux, France
  • Volume
    20
  • Issue
    22
  • fYear
    1984
  • Firstpage
    910
  • Lastpage
    912
  • Abstract
    In order to take into account the effect of the metallisation resistance involved in the modelling of FETs with a short and wide gate, we give an analytical treatment of the high-current I/V characteristic of a distributed Schottky diode.
  • Keywords
    Schottky-barrier diodes; metallisation; semiconductor device models; distributed Schottky diode; high current I-V characteristic; metallisation resistance; modelling; semiconductor device model;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840619
  • Filename
    4249131
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=995356