DocumentCode
995394
Title
MOCVD growth of GaAs on Si substrates with AlGaP and strained superlattice layers
Author
Soga, T. ; Hattori, Saki ; Sakai, Shin´ichi ; Takeyasu, M. ; Umeno, Masayoshi
Author_Institution
Nagoya University, Department of Electronics, Faculty of Engineering, Nagoya, Japan
Volume
20
Issue
22
fYear
1984
Firstpage
916
Lastpage
918
Abstract
GaAs with a mirror-like surface is grown by MOCVD on an Si substrate using an AlP, AlGaP, GaP/GaAs0.5P0.5 super-lattice and GaAs0.5P0.5/GaAs superlattice as intermediate layers. The photoluminescence intensity is found to be about 56% of that of a GaAs substrate grown under the same conditions and is one order of magnitude higher than that grown on a Ge-coated Si substrate, in spite of the early stage of the experiment.
Keywords
III-V semiconductors; chemical vapour deposition; gallium arsenide; luminescence of inorganic solids; photoluminescence; semiconductor growth; semiconductor superlattices; semiconductor thin films; AlGaP; GaAs; GaAs0.5P0.5/GaAs superlattice; GaP/GaAs0.5P0.5 superlattice; III-V semiconductor; MOCVD growth; Si substrate; intermediate layers; photoluminescence intensity; strained superlattice layers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840623
Filename
4249135
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