Title :
InGaAs/InP mesa photodetector passivated with silicon dioxide
Author :
Antell, G.R. ; Murison, R.F.
Author_Institution :
Standard Telecommunication Laboratories Ltd., Harlow, UK
Abstract :
A combination of mesa and planar techniques has enabled detectors of InGaAs on InP substrates to be masked during diffusion and later passivated by SiO2 films without degrading the dark current. Preliminary lifetests at 100°C are encouraging.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; passivation; photodetectors; III-V semiconductor; InGaAs; InGaAs/InP mesa photodetector; InP substrates; SiO2 passivation; dark current; diffusion; mask; planar techniques;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840625
