Local polarization phenomena in In-doped CdTe X-ray detector arrays

Author

Sato, Toshiyuki ; Sato, Kenji ; Ishida, Shinichiro ; Kiri, Motosada ; Hirooka, Megumi ; Yamada, Masayoshi ; Kanamori, Hitoshi

Author_Institution

Central Res. Lab., Shimadzu Corp., Kyoto, Japan

Volume

42

Issue

5

fYear

1995

fDate

10/1/1995 12:00:00 AM

Firstpage

1513

Lastpage

1518

Abstract

Local polarization phenomena have been studied in detector arrays with the detector element size of 500 μm×500 μm, which are fabricated from high-resistivity In-doped CdTe crystals grown by the vertical Bridgman technique. It has been found for the first time that a polarization effect, which is characterized by a progressive decrease of the pulse counting rate with increasing photon fluence, strongly depends on the detector elements, that is, the portion of crystals used. The influence of several parameters, such as the applied electric field strength, time, and temperature, on this local polarization effect is also investigated. From the photoluminescence measurements of the inhomogeneity of In dopant, it is concluded that the local polarization effect observed here originates from an deep level associated with In dopant in CdTe crystals

Keywords

X-ray detection; cadmium compounds; indium; photoluminescence; polarisation; semiconductor counters; CdTe:In; CdTe:In X-ray detector arrays; In dopant inhomogeneity; In-doped CdTe X-ray detector arrays; applied electric field strength; deep level; detector element size; high-resistivity In-doped CdTe crystals; local polarization phenomena; photoluminescence; photon fluence; pulse counting rate; temperature; time; vertical Bridgman technique; Ionization; Object detection; Photoluminescence; Photonic band gap; Photonic crystals; Polarization; Sensor arrays; Temperature; X-ray detection; X-ray detectors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.467949

Filename

467949