DocumentCode
995518
Title
Improved equivalent circuit for determination of MESFET and HEMT parasitic capacitances from "Coldfet" measurements
Author
white, Paul M. ; Healy, Richard M.
Author_Institution
Equipment Dev. Labs., Raytheon Co., Wayland, MA, USA
Volume
3
Issue
12
fYear
1993
Firstpage
453
Lastpage
454
Abstract
An improved equivalent circuit for MESFET and HEMT devices under zero drain bias pinched-off conditions is proposed. Parasitic gate and drain capacitances evaluated from low-frequency Y parameters using this circuit are approximately equal under conditions where equality would be expected from bond pad geometry considerations. In contrast, the previously used circuit considerably overestimates parasitic drain capacitance.<>
Keywords
Schottky gate field effect transistors; equivalent circuits; high electron mobility transistors; semiconductor device models; solid-state microwave devices; Coldfet measurements; HEMT; MESFET; bond pad geometry; drain capacitances; equivalent circuit; gate capacitances; low-frequency Y parameters; microwave transistors; parasitic capacitances; zero drain bias pinched-off conditions; Bonding; Capacitance measurement; Equations; Equivalent circuits; FETs; Frequency; HEMTs; MESFET circuits; PHEMTs; Parasitic capacitance;
fLanguage
English
Journal_Title
Microwave and Guided Wave Letters, IEEE
Publisher
ieee
ISSN
1051-8207
Type
jour
DOI
10.1109/75.251398
Filename
251398
Link To Document