Title :
The effects of parasitic capacitance on the noise figure of MESFETs
Author :
Tehrani, S. ; Nair, V. ; Weitzel, C.E. ; Tam, G.
Author_Institution :
Motorola Inc., Phoenix, AZ, USA
fDate :
5/1/1988 12:00:00 AM
Abstract :
The parasitic capacitance due to the gate pad and the gate feed area of a MESFET plays an important role in the low-noise performance of the device. Its effects on the noise figure have been measured and analyzed for π-FET device geometries. It is shown that there is an optimum unit gate width for the minimum noise figure. This optimum unit gate width depends on the device structure and the processing parameters. When the effects of parasitic capacitances are included, H. Fukui´s (1979) equation predicts noise figures that are in good agreement with the experimental data
Keywords :
III-V semiconductors; Schottky gate field effect transistors; capacitance; electron device noise; gallium arsenide; semiconductor device models; π-FET device geometries; Fukui equation; GaAs; MESFET; gate feed area; gate pad; low-noise performance; model; noise figure; optimum unit gate width; parasitic capacitance; Bonding; Capacitance measurement; Equations; Feeds; Gallium arsenide; Geometry; MESFETs; Noise figure; Parasitic capacitance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
