Title :
The compatibility of aluminium layers on plasma-deposited W and WSi 2 films
Author :
Fang, Y.K. ; Yang, H.M.
Author_Institution :
Res. Inst. of Electr. & Electron. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
5/1/1988 12:00:00 AM
Abstract :
The compatibility of Al on plasma-deposited W and WSi2 films in an Al sintering process is studied. The compatibility is investigated by measuring the variation of the barrier heights of Al/W/Si and Al/WSi2/Si Schottky-barrier contact that have been annealed at 400 to 600°C for 30 min. Rutherford backscattering and X-ray diffraction are used to examine the diffusion of Al and the interface constitution of these annealed contacts, respectively. The experimental results show that the barrier heights are almost constant, and no binary or ternary intermetallic compounds are found under 500°C annealing. Thus the plasma-deposited W and WSi2 thin films are metallurgically compatible with Al layers in VLSI fabrication
Keywords :
Schottky effect; X-ray diffraction examination of materials; aluminium; diffusion in solids; interface structure; metallisation; particle backscattering; plasma deposited coatings; silicon; sintering; tungsten; tungsten compounds; 400 degC; 600 degC; Al sintering process; Al-W-Si; Al-WSi2-Si; Rutherford backscattering; Schottky-barrier contact; VLSI fabrication; X-ray diffraction; annealing; barrier heights; compatibility; diffusion; interface constitution; metallisation; plasma deposition; Aluminum; Annealing; Backscatter; Constitution; Intermetallic; Plasma measurements; Plasma x-ray sources; Transistors; Very large scale integration; X-ray diffraction;
Journal_Title :
Electron Devices, IEEE Transactions on
