Gallium arsenide photo-MESFET´s

Author

Lakshmi, B. ; Chalapati, K. ; Srivastava, A.K. ; Arora, B.M. ; Subramanian, S. ; Sharma, D.K.

Author_Institution

SAMEER, Indian Inst. of Technol., Bombay, India

Volume

37

Issue

6

fYear

1990

fDate

6/1/1990 12:00:00 AM

Firstpage

1533

Lastpage

1535

Abstract

Photodetection response measurements performed on normally off GaAs photo-MESFETs are discussed. Two modes were investigated: (i) the normal mode in which the photon energy is greater than the bandgap and the light intensity is sufficient to bias the device above turn-on-threshold, and (ii) the subthreshold mode with subband-gap photon energy illumination. In the second mode, the transistor operates by internal photoemission from the metal gate to the semiconductor. In the normal mode, the square root of the drain photocurrent varies as the logarithm of the incident light intensity. The device characteristics for subband-gap illumination have been analyzed, and it is shown that the photocurrent varies linearly with light intensity in this mode

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; phototransistors; drain photocurrent; internal photoemission; linear photocurrent; linear response; logarithmic response; normal mode; photocurrent proportional to light intensity; response measurements; semiconductors; subband-gap photon energy illumination; subthreshold mode; Energy measurement; FETs; Gallium arsenide; Lighting; MESFETs; Optical modulation; Optical pulses; Photoconductivity; Photoelectricity; Photonic band gap;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.106251

Filename

106251