• DocumentCode
    995624
  • Title

    Planar InGaAs/InP PINFET fabricated by Be ion implantation

  • Author

    Hata, Satoshi ; Ikeda, Makoto ; Amano, Tetsuo ; Motosugi, G. ; Kurumada, K.

  • Author_Institution
    NTT Atsugi Electrical Communication Laboratory, Atsugi, Japan
  • Volume
    20
  • Issue
    22
  • fYear
    1984
  • Firstpage
    947
  • Lastpage
    948
  • Abstract
    Planar InGaAs PINFETs which provide the same heterostructure for both the PIN and the FET are proposed with the characteristics, p-type regions for PIN and FET are formed by Be ion implantation. Static optical response exhibits the total effective quantum efficiency of 400% at the wavelength of 1.55 ¿m.
  • Keywords
    III-V semiconductors; field effect transistors; gallium arsenide; indium compounds; integrated optoelectronics; ion implantation; phototransistors; 1.55 microns wavelength; Be ion implantation; III-V semiconductors; InGaAs; PINFETs; p-type regions; static optical response; total effective quantum efficiency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840644
  • Filename
    4249156
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=995624