Title :
InSb MOS structures fabricated by a novel thermal oxidation method
Author :
Takagi, Yutaka ; Sugiura, O. ; Takahashi, Tatsuro ; Naruke, Y. ; Matsumura, Mieko
Author_Institution :
Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
Abstract :
Interfaces between InSb and its native oxide grown by a novel thermal oxidation method have been clarified to have good electrical characteristics. The interface state density was of a V-shaped form with the minimum value of less than 1012/cm2 eV, and the field-effect mobility of the holes at 77 K was about 300 cm2/Vs.
Keywords :
III-V semiconductors; carrier mobility; indium antimonide; interface electron states; metal-insulator-semiconductor structures; oxidation; III-V semiconductor; InSb MOS structures; InSb/oxide interface; electrical characteristics; field effect hole mobility; interface state density; thermal oxidation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840649
