Title :
InGaAs/InP heterobipolar transistors for integration on semi-insulating InP substrates
Author :
D¿¿mbkes, H. ; K¿¿nig, U. ; Schwaderer, B.
Author_Institution :
AEG-Telefunken, Forschungsinstitut, Ulm, West Germany
Abstract :
InGaAs/InP npn heterojunction bipolar transistors (HBTs) have been fabricated from LPE layers grown on semi-insulating InP substrates for application to integrated circuits. The inverted emitter configuration is used, which allows the growth of the active layers without any additional steps. The HBTs show stable characteristics without any hysteresis and with current gains up to 25 for 0.7 ¿m base width. To our knowledge this is the first report of InGaAs/InP HBTs on a semi-insulating substrate.
Keywords :
III-V semiconductors; bipolar transistors; gallium arsenide; indium compounds; III-V semiconductor; InGaAs/InP heterobipolar transistors; LPE layers; active layers; current gains; heterojunction bipolar transistors; integrated circuits; integration; inverted emitter configuration; semiinsulating InP substrate; stable characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840650
