Title :
On the calculation of specific contact resistivity on ⟨100⟩ Si
Author :
Ng, Kwok K. ; Liu, Ruichen
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
6/1/1990 12:00:00 AM
Abstract :
In order to design submicrometer Si MOSFETs properly, the specific contact resistivity ρc has to be controlled. The ρ c is known to be a function of both the barrier height and the Si surface doping concentration. An existing theory is used to generate ρc, emphasizing details in the practical regimes, with a careful choice of proper parameters such as the tunneling effective mass, which is a function of both temperature and doping concentration
Keywords :
elemental semiconductors; insulated gate field effect transistors; semiconductor-metal boundaries; silicon; ⟨100⟩ Si; Si; barrier height; calculation of specific contact resistivity; practical regimes; semiconductors; submicrometer Si MOSFETs; surface doping concentration; tunneling effective mass; Conductivity; Doping; Gallium arsenide; Lighting; MESFETs; Photoelectricity; Photonic band gap; Schottky barriers; Silicides; Transient analysis;
Journal_Title :
Electron Devices, IEEE Transactions on
