Title :
Comment: Near room temperature 1.3 μm single photon counting with an InGaAs avalanche photodiode
Author :
McIntyre, R.J. ; Lightstone, A.W.
Author_Institution :
RCA Inc., Ste. Anne de Bellevue, Canada
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; photon counting; 1.3 microns; InGaAs avalanche photodiode; InGaAs/InP SAGM APD; breakdown pulse probability; breakdown voltage; dark carriers; room temperature; single photon counting; trapped carriers; undepleted drift region;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840654
