995750

Reply: Near room temperature 1.3 μm single photon counting with an InGaAs avalanche photodiode

Levine, B.F.

AT&T Bell Laboratories, Murray Hill, USA

20

23

1984

962

III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; photon counting; 1.3 microns; InGaAs avalanche photodiode; InGaAs/InP SAGM APD; breakdown pulse probability; breakdown voltage; dark carriers; room temperature; single photon counting; trapped carriers; undepleted drift region;

English

Electronics Letters

iet

0013-5194

jour

10.1049/el:19840655

4249168