Title :
Modal and relative intensity noise under VHF modulation in InGaAsP/InP lasers before and after degradation
Author :
Fukuda, Motohisa ; Iwane, G.
Author_Institution :
NTT Atsugi Electrical Communication Laboratory, Atsugi, Japan
Abstract :
The modal and relative intensity noise of InGaAsP/InP lasers are monitored before and after degradation. These noise levels under VHF modulation are scarely affected by laser degradation and are almost determined by VHF modulation, although the noise levels under DC bias increase after degradation.
Keywords :
III-V semiconductors; electron device noise; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical modulation; semiconductor junction lasers; DC bias; InGaAsP/InP lasers; VHF modulation; laser degradation; modal noise; noise levels; optical communication; relative intensity noise; semiconductor junction laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840657
