DocumentCode
995786
Title
Tonks-Langmuir problem for a bi-Maxwellian plasma
Author
Godyak, Valery A. ; Meytlis, Vladimir P. ; Strauss, Henry R.
Author_Institution
OSRAM Sylvania Inc., Danvers, MA, USA
Volume
23
Issue
4
fYear
1995
fDate
8/1/1995 12:00:00 AM
Firstpage
728
Lastpage
734
Abstract
An analytical solution of the Tonks-Langmuir (TL) problem with a bi-Maxwellian electron energy distribution function (EEDF) is obtained for a plasma slab. The solution shows that the ambipolar potential, the plasma density distribution, and the ion flux to the wall are mainly governed by the cold electrons, while the ionization rate and voltage drop across the wall sheath are governed by the hot electrons. The ionization rate by direct electron impact is found to be spatially rather uniform, contrary to the T-L solution where it is proportional to the plasma density distribution. The temperature of hot electrons defined by the ionization balance is found to be close to that of the T-L solution for a mono-Maxwellian EEDF, and is in reasonable agreement with experiments carried out in a low pressure capacitance RF discharge. The energy balance for cold electrons in this discharge shows that their heating by hot electrons via Coulomb interaction is equalized by the cold electrons´ escape to the RF electrodes during collapse of the RF sheath
Keywords
discharges (electric); high-frequency discharges; plasma density; plasma sheaths; plasma temperature; plasma theory; RF sheath; Tonks-Langmuir problem; ambipolar potential; analytical solution; bi-Maxwellian plasma; electron energy distribution function; electron impact; energy balance; hot electron temperature; hot electrons; ion flux; ionization balance; ionization rate; low pressure capacitance RF discharge; plasma density distribution; plasma slab; voltage drop; wall sheath; Capacitance; Distribution functions; Electrons; Ionization; Plasma density; Plasma sheaths; Plasma temperature; Radio frequency; Slabs; Voltage;
fLanguage
English
Journal_Title
Plasma Science, IEEE Transactions on
Publisher
ieee
ISSN
0093-3813
Type
jour
DOI
10.1109/27.467995
Filename
467995
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