Directional Sensitivity of Single Event Upsets in 90 nm CMOS Due to Charge Sharing

Author

Amusan, Oluwole A. ; Massengill, Lloyd W. ; Baze, Mark P. ; Bhuva, Bharat L. ; Witulski, Arthur F. ; DasGupta, Sandeepan ; Sternberg, Andrew L. ; Fleming, Patrick R. ; Heath, Christopher C. ; Alles, Michael L.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN

Volume

54

Issue

6

fYear

2007

Firstpage

2584

Lastpage

2589

Abstract

Heavy-ion testing of a radiation-hardened-by-design (RHBD) 90 nm dual interlocked cell (DICE latch) shows significant directional sensitivity results impacting observed cross-section and LET thresholds. 3-D TCAD simulations show this directional effect is due to charge sharing and parasitic bipolar effects due to n-well potential collapse.

Keywords

CMOS integrated circuits; design for testability; radiation hardening (electronics); technology CAD (electronics); 3D TCAD simulations; CMOS; DICE latch; RHBD; charge sharing effects; dual interlocked cell; heavy-ion testing; n-well potential collapse; parasitic bipolar effects; radiation-hardened-by-design approach; single event circuit characterization; Bipolar transistors; Circuit simulation; Discrete event simulation; Integrated circuit layout; Latches; Microelectronics; Protection; Radiation hardening; Single event upset; Testing; Charge sharing; DICE latch; cross-section; let threshold; n-well potential collapse; parasitic bipolar transistor; radiation hardened by design; single event circuit characterization; single event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2007.907989

Filename

4394994