DocumentCode
995870
Title
New approach to growth of abrupt heterojunctions by MOVPE
Author
Moss, R.H. ; Spurdens, P.C.
Author_Institution
British Telecom Research Laboratories, Ipswich, UK
Volume
20
Issue
23
fYear
1984
Firstpage
978
Lastpage
980
Abstract
A new approach to the growth of abrupt heterojunctions by MOVPE in which the substrate is moved from one gas stream to another is reported. The technique has been demonstrated by successfully growing both single thick layers and multi-quantum-well layers of GaInAs and InP. The structures were grown at one atmosphere using preformed adducts and the material was assessed using double crystal X-ray diffraction, transmission electron microscopy (TEM) and photoluminescence (PL) techniques and found to be of high quality.
Keywords
III-V semiconductors; X-ray diffraction examination of materials; gallium arsenide; indium compounds; p-n heterojunctions; semiconductor growth; semiconductor superlattices; transmission electron microscope examination of materials; vapour phase epitaxial growth; GaInAs; GaInAs/InP superlattice; III-V semiconductors; InP; MOVPE; TEM; abrupt heterojunctions; double crystal X-ray diffraction; multiquantum well layers; photoluminescence; preformed adducts; semiconductor growth;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840666
Filename
4249179
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