Effects of Random Dopant Fluctuations (RDF) on the Single Event Vulnerability of 90 and 65 nm CMOS Technologies

Author

Balasubramanian, A. ; Fleming, P.R. ; Bhuva, B.L. ; Amusan, O.A. ; Massengill, L.W.

Author_Institution

Vanderbilt Univ., Nashville

Volume

54

Issue

6

fYear

2007

Firstpage

2400

Lastpage

2406

Abstract

Random dopant fluctuation (RDF) induced threshold voltage variations affect two critical parameters used as a measure of single event (SE) hardness (i) single event transient (SET) pulse widths and (ii) critical charge . This causes an increase in the spread of SET pulse widths in sequential logic circuits and in the required for single event upsets (SEUs) in static random access memory cells (SRAMs). Monte Carlo simulations show this can affect the hardness characterization in a commercial 90 nm process and a generic 65 nm technology. This necessitates statistical design approaches for validating conventional hardening schemes, to assure a required level of radiation tolerance in these deep sub-micron technologies.

Keywords

CMOS memory circuits; Monte Carlo methods; SRAM chips; nanoelectronics; semiconductor doping; CMOS; Monte Carlo simulations; SET pulse widths; SRAM; critical charge; deep submicron technologies; hardening schemes; hardness characterization; metal-oxide-semiconductor; radiation tolerance; random dopant fluctuations; sequential logic circuits; single event hardness; single event transient pulse widths; single event upsets; single event vulnerability; size 65 nm; size 90 nm; static random access memory cells; statistical design; threshold voltage variations; CMOS technology; Charge measurement; Current measurement; Fluctuations; Pulse circuits; Pulse measurements; Resource description framework; Sequential circuits; Space vector pulse width modulation; Threshold voltage; ${rm V}_{t}$ variations; Complementary metal-oxide-semiconductor (CMOS); critical charge (${rm Q}_{rm crit}$); random dopant fluctuations (RDF); single event transient (SET); single event upset (SEUs); static random access memory (SRAM);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2007.908167

Filename

4394997