The Effects of Proton and X-Ray Irradiation on the DC and AC Performance of Complementary (npn + pnp) SiGe HBTs on Thick-Film SOI

Author

Bellini, Marco ; Jun, Bongim ; Sutton, Akil K. ; Appaswamy, Aravind C. ; Cheng, Peng ; Cressler, John D. ; Marshall, Paul W. ; Schrimpf, Ronald D. ; Fleetwood, Daniel M. ; El-Kareh, Badih ; Balster, Scott ; Steinmann, Philipp ; Yasuda, Hiroshi

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA

Volume

54

Issue

6

fYear

2007

Firstpage

2245

Lastpage

2250

Abstract

The impact of 63.3 MeV proton and 10 keV X-ray irradiation on the DC and AC performance of complementary SiGe HBTs on thick-film SOI is investigated. Proton and X-ray induced changes in the forward and inverse Gummel characteristics, the output characteristics, and avalanche multiplication are reported for both npn and pnp SiGe HBTs, at both room temperature (300 K) and at cryogenic temperatures (down to 30 K). Comparison of room temperature and cryogenic data suggests interface trap formation at two distinct physical locations in the transistors. Experimental data and calibrated TCAD simulations are used to compare the radiation response of both thick-film SOI devices and thin-film SOI SiGe HBTs.

Keywords

Ge-Si alloys; X-ray effects; avalanche breakdown; heterojunction bipolar transistors; proton effects; semiconductor materials; thin film transistors; Gummel characteristics; SiGe; X-ray irradiation; avalanche multiplication; calibrated TCAD simulations; complementary HBTs; cryogenic temperatures; electron volt energy 10 keV; electron volt energy 63.3 MeV; proton irradiation; room temperature; silicon-germanium heterojunction bipolar transistors; temperature 293 K to 298 K; temperature 30 K; thick-film SOI; Cryogenics; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit noise; Isolation technology; Protons; Silicon germanium; Silicon on insulator technology; Space technology; Temperature; C-SiGe; SOI; SiGe HBT; TCAD; heterojunction bipolar transistors; radiation effects; silicon-on-insulator;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2007.909022

Filename

4395000