Title :
Receiver sensitivity temperature dependence of small detectable area Hi-Lo germanium avalanche photodiode
Author :
Niwa, Masaaki ; Tashiro, Yoichiro ; Minemura, Kazuki ; Iwasaki, Hisao ; Abe, Y.
Author_Institution :
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Abstract :
Optical receiver sensitivity temperature dependence is measured in different detectable area (80, 30 ¿m-diameter) Hi-Lo Ge APD modules at 450 Mbit/s bit rates. A 30 ¿m-diameter device has a little power penalty against temperature increase compared with an 80 ¿m-diameter device, with 2.4 dB receiver sensitivity improvement at 45°C.
Keywords :
avalanche photodiodes; elemental semiconductors; germanium; optical communication equipment; Ge; avalanche photodiode; modules; receiver sensitivity temperature dependence; small detectable area; temperature increase;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840675
