• DocumentCode
    996032
  • Title

    1.5 μm monolithic shallow-groove coupled-cavity vapour phase transported buried heterostructure lasers

  • Author

    Koch, T.L. ; Coldren, L.A. ; Bridges, T.J. ; Burkhardt, E.G. ; Corvini, P.J. ; Wilt, D.P.

  • Author_Institution
    AT&T Bell Laboratories, Holmdel, USA
  • Volume
    20
  • Issue
    24
  • fYear
    1984
  • Firstpage
    1001
  • Lastpage
    1002
  • Abstract
    We demonstrate a new low-threshold 1.5 μm single-wavelength InGaAsP laser. Frequency selectivity is achieved by a simple photolithographically defined groove discontinuity involving no additional processing. Side mode suppressions as high as 26 dB have been achieved with typical thresholds of 35 mA.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 1.5 microns wavelength; III-V semiconductors; buried heterostructure lasers; photolithographically defined groove discontinuity; side mode suppressions; single-wavelength InGaAsP laser; thresholds;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840681
  • Filename
    4249195
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=996032