• DocumentCode
    996063
  • Title

    Laser SEE Sensitivity Mapping of SRAM Cells

  • Author

    Chugg, A.M. ; Burnell, A.J. ; Moutrie, M.J. ; Jones, R. ; Harboe-Sorensen, R.

  • Author_Institution
    MBDA UK Ltd., Bristol
  • Volume
    54
  • Issue
    6
  • fYear
    2007
  • Firstpage
    2106
  • Lastpage
    2112
  • Abstract
    It is shown that laser sensitivity mapping at the cell level can be used to reconstruct and analyze the SEE cross-section. It resolves such conundrums as data pattern variations in the SEE sensitivity of memories. The pattern of SEE sensitivity revealed by the laser maps is shown to be reflected in features of ion beam test data.
  • Keywords
    SRAM chips; ion beam applications; laser beam applications; laser beam effects; SEE cross-section; SRAM cells; data pattern variations; ion beam test data; laser SEE sensitivity mapping; laser maps; memories; multiple bit upset; single event effects; static random access memory cells; Ion beams; Laser applications; Laser beams; Optical arrays; Optical pulses; Pulsed laser deposition; Radiation effects; Random access memory; SRAM chips; Testing; Ion beam applications; SRAM chips; laser radiation effects; multiple bit upset (MBU); single event effects (SEE);
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2007.909514
  • Filename
    4395011
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=996063