Effect of Well and Substrate Potential Modulation on Single Event Pulse Shape in Deep Submicron CMOS

Author

DasGupta, S. ; Witulski, A.F. ; Bhuva, B.L. ; Alles, M.L. ; Reed, R.A. ; Amusan, O.A. ; Ahlbin, J.R. ; Schrimpf, R.D. ; Massengill, L.W.

Author_Institution

Vanderbilt Univ., Nashville

Volume

54

Issue

6

fYear

2007

Firstpage

2407

Lastpage

2412

Abstract

Simulations are used to characterize the single event transient current and voltage waveforms in deep submicron CMOS integrated circuits. Results indicate that the mechanism controlling the height and duration of the observed current plateau is the redistribution of the electrostatic potential in the substrate following a particle strike. Quantitative circuit and technology factors influencing the mechanism include restoring current, device sizing, and well and substrate doping.

Keywords

CMOS integrated circuits; semiconductor doping; substrates; transients; TCAD; Technology Computer Aided Design; current plateau; deep submicron CMOS; device sizing; electrostatic potential redistribution; integrated circuits; particle strike; potential modulation; pulse width; restoring current; single event pulse shape; single event transient current; substrate doping; substrate potential modulation; voltage waveforms; well doping; well potential modulation; CMOS integrated circuits; CMOS technology; Circuit simulation; Discrete event simulation; Electrostatics; Potential well; Pulse modulation; Pulse shaping methods; Shape; Voltage; Field funneling; TCAD; potential modulation; pulse shape; pulse width; single event;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2007.910863

Filename

4395013