Title :
Λ/4-shifted InGaAsP/InP DFB lasers by simultaneous holographic exposure of positive and negative photoresists
Author :
Utaka, K. ; Akiba, Shigeyuki ; Sakai, Kenji ; Matsushima, Y.
Author_Institution :
KDD Research & Development Laboratories, Tokyo, Japan
Abstract :
λ/4-shifted InGaAsP/InP DFB lasers were fabricated by a novel method, that is, simultaneous holographic exposure of positive and negative photoresists. The λ/4-phase-shift in the first-order corrugations formed on an InP substrate was confirmed through SEM views and diffracted beam patterns. A strong resonance peak below the threshold and single-wavelength operation above it at the Bragg wavelength were observed.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; photoresists; semiconductor junction lasers; Bragg wavelength; III-V semiconductors; InGaAsP/InP DFB lasers; InP substrate; SEM views; diffracted beam patterns; first-order corrugations; negative photoresists; positive photoresists; resonance peak; simultaneous holographic exposure; single-wavelength operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840686
