• DocumentCode
    996144
  • Title

    Dielectric isolation by orientation-dependent etching

  • Author

    Nicholas, K.H. ; Stemp, I.J. ; Brockman, H.E.

  • Author_Institution
    Philips Research Laboratories, Redhill, UK
  • Volume
    20
  • Issue
    24
  • fYear
    1984
  • Firstpage
    1014
  • Lastpage
    1015
  • Abstract
    A dielectric isolation technology is described that is suitable for use in integrated circuits and particularly for latch-up suppression in CMOS. The silicon islands maintain the original crystal surface and no damaging implants are involved. The technique uses anisotropic and orientation-dependent etching followed by planarisation.
  • Keywords
    CMOS integrated circuits; etching; integrated circuit technology; CMOS; Si islands; dielectric isolation technology; latch-up suppression; orientation-dependent etching; planarisation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840690
  • Filename
    4249204
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=996144