Title :
GaInAsP/InP phase-adjusted distributed feedback lasers with a step-like nonuniform stripe width structure
Author :
Soda, H. ; Wakao, K. ; Sudo, H. ; Tanahashi, Toshiyuki ; Imai, H.
Author_Institution :
Fujitsu Laboratories Ltd., Atsugi, Japan
Abstract :
Stable single-longitudinal lasing has been achieved in DFB lasers with a step-like nonuniform stripe width structure for phase adjustment. The phase-adjusted DFB laser diode lased at 28 mA, near the Bragg wavelength.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor junction lasers; Bragg wavelength; GaInAsP/InP; III-V semiconductors; phase-adjusted distributed feedback lasers; single-longitudinal lasing; step-like nonuniform stripe width structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840692
