• DocumentCode
    996165
  • Title

    GaInAsP/InP phase-adjusted distributed feedback lasers with a step-like nonuniform stripe width structure

  • Author

    Soda, H. ; Wakao, K. ; Sudo, H. ; Tanahashi, Toshiyuki ; Imai, H.

  • Author_Institution
    Fujitsu Laboratories Ltd., Atsugi, Japan
  • Volume
    20
  • Issue
    24
  • fYear
    1984
  • Firstpage
    1016
  • Lastpage
    1018
  • Abstract
    Stable single-longitudinal lasing has been achieved in DFB lasers with a step-like nonuniform stripe width structure for phase adjustment. The phase-adjusted DFB laser diode lased at 28 mA, near the Bragg wavelength.
  • Keywords
    III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor junction lasers; Bragg wavelength; GaInAsP/InP; III-V semiconductors; phase-adjusted distributed feedback lasers; single-longitudinal lasing; step-like nonuniform stripe width structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840692
  • Filename
    4249206
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=996165