DocumentCode
996181
Title
Effect of Voltage Fluctuations on the Single Event Transient Response of Deep Submicron Digital Circuits
Author
Gadlage, Matthew J. ; Schrimpf, Ronald D. ; Narasimham, Balaji ; Bhuva, Bharat L. ; Eaton, Paul H. ; Benedetto, Joseph M.
Author_Institution
Vanderbilt Univ., Nashville, TN
Volume
54
Issue
6
fYear
2007
Firstpage
2495
Lastpage
2499
Abstract
Heavy ion-induced single events transients (SETs) in advanced digital circuits are becoming a significant reliability issue for space-based systems. In this work, two experiments are performed on devices designed to look specifically at digital single event transients. Small voltage variations, like those that can be found across an integrated circuit, are shown to affect the digital single event transient response significantly. For technologies with supply voltages near 1 V, these potential variations may result in unexpected vulnerability.
Keywords
digital integrated circuits; fluctuations; ion beam effects; transient analysis; deep submicron digital circuits; heavy ion radiation; single event transient; space-based systems; voltage fluctuations; Circuit testing; Delay; Digital circuits; Error analysis; Logic; Pulse circuits; Pulse measurements; Space vector pulse width modulation; Transient response; Voltage fluctuations; Heavy ion; ion radiation effects; single event upset (SEU);
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2007.907433
Filename
4395022
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