• DocumentCode
    996181
  • Title

    Effect of Voltage Fluctuations on the Single Event Transient Response of Deep Submicron Digital Circuits

  • Author

    Gadlage, Matthew J. ; Schrimpf, Ronald D. ; Narasimham, Balaji ; Bhuva, Bharat L. ; Eaton, Paul H. ; Benedetto, Joseph M.

  • Author_Institution
    Vanderbilt Univ., Nashville, TN
  • Volume
    54
  • Issue
    6
  • fYear
    2007
  • Firstpage
    2495
  • Lastpage
    2499
  • Abstract
    Heavy ion-induced single events transients (SETs) in advanced digital circuits are becoming a significant reliability issue for space-based systems. In this work, two experiments are performed on devices designed to look specifically at digital single event transients. Small voltage variations, like those that can be found across an integrated circuit, are shown to affect the digital single event transient response significantly. For technologies with supply voltages near 1 V, these potential variations may result in unexpected vulnerability.
  • Keywords
    digital integrated circuits; fluctuations; ion beam effects; transient analysis; deep submicron digital circuits; heavy ion radiation; single event transient; space-based systems; voltage fluctuations; Circuit testing; Delay; Digital circuits; Error analysis; Logic; Pulse circuits; Pulse measurements; Space vector pulse width modulation; Transient response; Voltage fluctuations; Heavy ion; ion radiation effects; single event upset (SEU);
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2007.907433
  • Filename
    4395022