• DocumentCode
    996227
  • Title

    Erratum: Low-threshold high-speed 1.55 μm vapour phase transported buried heterostructure lasers (VPTBH)

  • Author

    Koch, T.L. ; Coldren, Larry A. ; Bridges, T.J. ; Burkhardt, E.G. ; Corvini, P.J. ; Miller, B.I.

  • Volume
    20
  • Issue
    24
  • fYear
    1984
  • Firstpage
    1024
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; optical modulation; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.55 microns; 3 dB detected bandwidths; InGaAsP buried heterostructure laser; VPE; high-frequency modulation characteristics; hydride vapour phase epitaxial regrowth technique; semiconductor laser; threshold current 15 mA;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840698
  • Filename
    4249212