• DocumentCode
    996309
  • Title

    Mapping of Single Event Burnout in Power MOSFETs

  • Author

    Haran, Avner ; Barak, Joseph ; David, David ; Refaeli, Nati ; Fischer, Bernd E. ; Voss, Kay-Obbe ; Du, Guanghua ; Heiss, Markus

  • Author_Institution
    Soreq NRC, Yavne
  • Volume
    54
  • Issue
    6
  • fYear
    2007
  • Firstpage
    2488
  • Lastpage
    2494
  • Abstract
    Direct heavy ion mapping of single-event burnout (SEB) in power MOSFETs is presented for the first time utilizing the GSI microprobe with Xe and Ar ion beams. The mapping results indicate that the source and the channel of the power MOSFET are the most sensitive areas to SEB. Correlation to charge collection mapping, as well as the difference between the mapping results of the two ion beams are discussed.
  • Keywords
    ion beam effects; power MOSFET; GSI microprobe; charge collection mapping; direct heavy ion mapping; ion beams; power MOSFET; single event burnout; Argon; Electric breakdown; Ion beams; MOSFETs; Rectifiers; Shape; Single event upset; Space missions; Testing; Voltage; Alpha particles; HEXFET; heavy ion mapping; microbeam; power MOSFET; single event burnout (SEB); single event gate rupture (SEGR);
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2007.910851
  • Filename
    4395034
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=996309