Title :
The Effects of Angle of Incidence and Temperature on Latchup in 65 nm Technology
Author :
Hutson, John M. ; Pellish, Jonathan D. ; Boselli, Gianluca ; Baumann, Robert ; Reed, Robert A. ; Schrimpf, Ronald D. ; Weller, Robert A. ; Massengill, Lloyd W.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN
Abstract :
Single event latchup (SEL) in a 65 nm CMOS technology is examined with respect to strike angle of incidence and variations in device temperature. A significant difference in device sensitivity is observed with a change in the orientation of grazing angle strikes. The impact of an extremely high aspect ratio sensitive volume on SEL rate is discussed. It is suggested that SEL experiments should be conducted at various lateral orientations when near-grazing beam angles are tested.
Keywords :
CMOS integrated circuits; radiation effects; technology CAD (electronics); CMOS technology; TCAD Simulations; angle of incidence; radiation effects; single event latchup; size 65 nm; CMOS technology; Circuits; Electric variables; Instruments; Protons; Semiconductor device measurement; Temperature distribution; Temperature sensors; Testing; Voltage; 65 nm; Radiation effects; single event latchup;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2007.910330
