DocumentCode :
996463
Title :
Latch Design Techniques for Mitigating Single Event Upsets in 65 nm SOI Device Technology
Author :
KleinOsowski, A.J. ; Cannon, Ethan H. ; Gordon, Michael S. ; Heidel, David F. ; Oldiges, Phil ; Plettner, Cristina ; Rodbell, Kenneth P. ; Rose, Ronald D. ; Tang, Henry H K
Author_Institution :
IBM Austin Res. Lab., Austin, TX
Volume :
54
Issue :
6
fYear :
2007
Firstpage :
2021
Lastpage :
2027
Abstract :
This paper describes techniques for mitigating single event upsets in master-slave flip-flop latches in 65 nm SOI device technology. Techniques are explained, modeled, and measured with hardware experiments.
Keywords :
flip-flops; silicon-on-insulator; SOI device technology; latch design; master-slave flip-flop latches; silicon-on-insulator latches; single event upset mitigation; size 65 nm; Circuit topology; Error correction codes; Flip-flops; Inverters; Laboratories; Latches; Paper technology; Silicon on insulator technology; Single event upset; Threshold voltage; Alpha particle; modeling; radiation event; single event upset (SEU); soft error;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2007.909707
Filename :
4395047
Link To Document :
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