Title :
Laser gain and current density in a disordered AlGaAs/GaAs quantum well
Author :
Li, E.H. ; Chan, Kheong Sann
Author_Institution :
Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK
fDate :
7/8/1993 12:00:00 AM
Abstract :
The laser gain and current density at room temperature are analysed for disordered (interdiffusion induced) Al0.3Ga0.7As/GaAs single quantum well structures at a carrier injection level of 4*1012 cm-2. The results show that both the peak gain and current density remain about the same strength during the initial stages of disordering, and provide a bandwidth of 55 nm.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor lasers; semiconductor quantum wells; AlGaAs-GaAs; carrier injection level; current density; disordered; laser gain; semiconductor lasers; single quantum well structures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930824
