Title :
Single-Event Burnout of Silicon Carbide Schottky Barrier Diodes Caused by High Energy Protons
Author :
Kuboyama, Satoshi ; Kamezawa, Chihiro ; Satoh, Yohei ; Hirao, Toshio ; Ohyama, Hidenori
Author_Institution :
Univ. of Tokyo, Tokyo
Abstract :
It was demonstrated that single-event burnout was observed in silicon carbide Schottky barrier diodes with high energy proton irradiation. The behavior was successfully explained using a failure density function based on the geometric distribution. Responsible spallation fragments to trigger the single-event burnout were identified by Geant4 simulations.
Keywords :
Schottky barriers; Schottky diodes; proton effects; silicon compounds; wide band gap semiconductors; Geant4 simulations; SiC; failure density function; geometric distribution; high energy proton irradiation; silicon carbide Schottky barrier diodes; single-event burnout; spallation fragments; Density functional theory; P-n junctions; Packaging; Particle beams; Photonic band gap; Protons; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; High energy protons; Schottky barrier diode; silicon carbide; silicon carbide (SiC); single-event burnout; single-event burnout (SEB);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2007.910877
