• DocumentCode
    996494
  • Title

    Single-Event Burnout of Silicon Carbide Schottky Barrier Diodes Caused by High Energy Protons

  • Author

    Kuboyama, Satoshi ; Kamezawa, Chihiro ; Satoh, Yohei ; Hirao, Toshio ; Ohyama, Hidenori

  • Author_Institution
    Univ. of Tokyo, Tokyo
  • Volume
    54
  • Issue
    6
  • fYear
    2007
  • Firstpage
    2379
  • Lastpage
    2383
  • Abstract
    It was demonstrated that single-event burnout was observed in silicon carbide Schottky barrier diodes with high energy proton irradiation. The behavior was successfully explained using a failure density function based on the geometric distribution. Responsible spallation fragments to trigger the single-event burnout were identified by Geant4 simulations.
  • Keywords
    Schottky barriers; Schottky diodes; proton effects; silicon compounds; wide band gap semiconductors; Geant4 simulations; SiC; failure density function; geometric distribution; high energy proton irradiation; silicon carbide Schottky barrier diodes; single-event burnout; spallation fragments; Density functional theory; P-n junctions; Packaging; Particle beams; Photonic band gap; Protons; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; High energy protons; Schottky barrier diode; silicon carbide; silicon carbide (SiC); single-event burnout; single-event burnout (SEB);
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2007.910877
  • Filename
    4395050
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=996494