Title :
The Role of Ion Track Structure on High-Injection Carrier Dynamics in High-Speed Si and III-V Optoelectronic Sensors
Author :
Laird, Jamie S. ; Onoda, Shinobu ; Hirao, Toshio ; Edmonds, Larry ; Ohshima, Takeshi
Author_Institution :
California Inst. of Technol., Pasadena
Abstract :
The role of ion track structure on high-injection carrier dynamics in a high-speed GaAs p+-n-n+ sensor is investigated using laser and high-energy heavy ion microbeams. The results are compared to similar data collected on a Si p+-n-n+ device where space charge screening effects (SCSE) result in transient shape being dependent on ion track structure. The results collected are discussed within the framework of the Edmonds charge collection model and generalized to III-V optoelectronic sensors.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; high-speed optical techniques; ion beam effects; laser beam effects; photodetectors; silicon; space-charge limited devices; Edmonds charge collection model; GaAs; III-V optoelectronic sensors; Si; high-energy heavy ion microbeams; high-injection carrier dynamics; high-speed Si p+-n-n+ optoelectronic sensors; ion track structure; laser microbeams; photodetectors; picosecond laser; space charge screening effects; transient current; Gallium arsenide; III-V semiconductor materials; Laser modes; Optoelectronic and photonic sensors; Photodetectors; Plasma density; Plasma devices; Plasma displays; Plasma properties; Shape; GaAs; III-V; Si; heavy ion; high frequency; high-injection effects; ion track structure; optoelectronics; picosecond laser; space-charge screening; transient current; ultrafast;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2007.911421
