Title :
Fast pulse behaviour of InGaAsP/InP double-heterostructure lasers emitting at 1.27 μm
Author :
Yamamoto, Takayuki ; Sakai, Kenji ; Akiba, Shigeyuki ; Suematsu, Yasuharu
Author_Institution :
KDD Research & Development Laboratories, Tokyo, Japan
Abstract :
The fast pulse behaviour of InGaAsP/InP d.h. lasers prepared on (100) InP substrates by liquid phase epitaxy has been studied. The possibility of high-speed direct modulation at a few gigahertz has been deduced from the relaxation oscillation characteristics.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical modulation; semiconductor junction lasers; InGaAsP-InP double heterostructure lasers; fast pulse behaviour; high speed direct modulation; liquid phase epitaxy; relaxation oscillation characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770100
