• DocumentCode
    996540
  • Title

    Fast pulse behaviour of InGaAsP/InP double-heterostructure lasers emitting at 1.27 μm

  • Author

    Yamamoto, Takayuki ; Sakai, Kenji ; Akiba, Shigeyuki ; Suematsu, Yasuharu

  • Author_Institution
    KDD Research & Development Laboratories, Tokyo, Japan
  • Volume
    13
  • Issue
    5
  • fYear
    1977
  • Firstpage
    142
  • Lastpage
    143
  • Abstract
    The fast pulse behaviour of InGaAsP/InP d.h. lasers prepared on (100) InP substrates by liquid phase epitaxy has been studied. The possibility of high-speed direct modulation at a few gigahertz has been deduced from the relaxation oscillation characteristics.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical modulation; semiconductor junction lasers; InGaAsP-InP double heterostructure lasers; fast pulse behaviour; high speed direct modulation; liquid phase epitaxy; relaxation oscillation characteristics;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770100
  • Filename
    4249244
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=996540