The Effect of Active Delay Element Resistance on Limiting Heavy Ion SEU Upset Cross-Sections of SOI ADE/SRAMs

Author

Liu, S.T. ; Nelson, D.K. ; Tsang, J.C. ; Golke, K. ; Fechner, P. ; Heikkila, W. ; Brewster, N. ; Van Cleave, R. ; Liu, H.Y. ; McMarr, P.J. ; Hughes, H.L. ; Ziegler, J.F.

Author_Institution

Honeywell Aerosp., Plymouth

Volume

54

Issue

6

fYear

2007

Firstpage

2480

Lastpage

2487

Abstract

This paper discusses the effective limiting heavy-ion induced single-event upset cross section of radiation-hardened 150 nm SOI SRAM and the resistance of the active-delay element (ADE) used in the memory cell. The effective limiting upset cross-section of ADE/SRAM is found to be proportional to the product of the limiting upset cross-section of the 6T SRAM of the same CMOS technology and a dimensionless function of the normalized ADE resistance. In addition, a cross-section higher than this effective limiting cross-section at high effective LET (>250 MeV-cm²/mg) is observed. This additional contribution to the cross-section is attributed to the upset caused by the high effective LET heavy ion hitting the on-transistor in the memory cell.

Keywords

SRAM chips; ion beam effects; radiation hardening (electronics); silicon-on-insulator; CMOS technology; SOI SRAM; active delay element resistance; heavy-ion induced single-event upset cross section; limiting cross-section; memory cell; on-transistor; radiation hardening; CMOS technology; DH-HEMTs; Delay effects; Laboratories; Manufacturing; Protons; Random access memory; Resistors; Single event upset; Switches; Active delay element; SOI; SRAM; single-event effects; upset cross-section;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2007.910875

Filename

4395061