Title :
Long-wavelength strained-layer InAs/GaInAs single-quantum-well laser grown by molecular beam epitaxy on InP substrate
Author :
Tournie, E. ; Grunberg, P. ; Fouillant, C. ; Kadret, S. ; Boissier, G. ; Baranov, Alexander ; Joullie, A. ; Gaumont-Goarin, E. ; Ploog, K.H.
Author_Institution :
Max Planck Inst. fur Festkorperforschung, Stuttgart, Germany
fDate :
7/8/1993 12:00:00 AM
Abstract :
Laser emission is reported for the first time from a 10 monolayer-wide highly strained (3.2%) InAs single quantum well confined by Ga0.47In0.53As layers. At 80 K the emission spectrum of broad-area laser diodes is centred at 1.836 mu m, the threshold current-density is approximately 500 A/cm2 and the characteristic temperature is T0 approximately=30 K. CW operation is achieved up to 110 K with narrow-stripe devices but at shorter wavelength, due to increased losses and filling of the quantum-well energy levels.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor lasers; semiconductor quantum wells; 1.836 micron; 80 to 110 K; III-V semiconductors; InAs-GaInAs-InP; InP; characteristic temperature; emission spectrum; laser emission; long-wavelength strained-layer lasers; losses; molecular beam epitaxy; narrow-stripe devices; quantum-well energy levels; single quantum well; threshold current-density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930839
