• DocumentCode
    996663
  • Title

    Analysis of threshold current density of CdZnSe/ZnSSe strained well lasers

  • Author

    Kuramoto, Masafumi ; Chong, T.C. ; Kikuchi, A. ; Kishino, Katsumi

  • Author_Institution
    Dept. of Electr. Electron. Eng., Sophia Univ., Tokyo, Japan
  • Volume
    29
  • Issue
    14
  • fYear
    1993
  • fDate
    7/8/1993 12:00:00 AM
  • Firstpage
    1260
  • Lastpage
    1262
  • Abstract
    The threshold current density (Jth) of blue-green CdZnSe/ZnSSe strained quantum well lasers is analysed using the laser theory established for III-V semiconductor lasers. Very good agreement between theory and the reported experimental Jth values is obtained over a wide temperature range from 77 to 273 K. The optimal Cd composition of a CdZnSe single quantum well active layer for obtaining a low Jth value at room temperature is in the range 0.25-0.30.
  • Keywords
    II-VI semiconductors; cadmium compounds; laser theory; semiconductor lasers; sulphur compounds; zinc compounds; 77 to 273 K; CdZnSe-ZnSSe; blue-green laser; laser theory; optimal Cd composition; quantum well; strained well lasers; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930842
  • Filename
    252418
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=996663