Title :
K-band f.e.t. amplifiers
Author :
Nowak, M.M. ; Terzian, P.A. ; Fairman, R.D.
Author_Institution :
Varian Associates, Palo Alto, USA
Abstract :
Single-stage f.e.t. amplifiers operating in K-band have been constructed using the Varian VSX 9305 0.5 ¿m-gate GaAs f.e.t. An amplifier gain of 9±1 dB was obtained over the frequency band 18.5¿20.5 GHz and gain of 8±1 dB was observed from 23.0 to 26.0 GHz. An amplifier noise figure of 5.6 dB was measured at 24 GHz.
Keywords :
Schottky gate field effect transistors; field effect transistor circuits; microwave amplifiers; solid-state microwave circuits; 18.5 to 20.5 GHz; 23 to 26 GHz; 24 GHz; GaAs FET; K-band FET amplifier; amplifier gain; amplifier noise figure; microwave amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770113
