The Effects of Hydrogen in Hermetically Sealed Packages on the Total Dose and Dose Rate Response of Bipolar Linear Circuits

Author

Pease, Ronald L. ; Platteter, Dale G. ; Dunham, Gary W. ; Seiler, John E. ; Adell, Philippe C. ; Barnaby, Hugh J. ; Chen, Jie

Author_Institution

RLP Res., Los Lunas

Volume

54

Issue

6

fYear

2007

Firstpage

2168

Lastpage

2173

Abstract

It is demonstrated with test transistors and circuits that a small amount of hydrogen trapped in hermetically sealed packages can significantly degrade the total dose and dose rate response of bipolar linear microelectronics. In addition, we show that when exposed to an atmosphere of 100% molecular hydrogen dies with silicon nitride passivation are unaffected, whereas dies with silicon carbide or deposited oxides become very soft at high and low dose rate.

Keywords

bipolar integrated circuits; hermetic seals; passivation; bipolar linear circuits; hermetically sealed packages; hydrogen effects; molecular hydrogen dies; silicon carbide; silicon nitride passivation; Atmosphere; Bipolar transistor circuits; Circuit testing; Degradation; Hermetic seals; Hydrogen; Linear circuits; Microelectronics; Packaging; Silicon; Dose rate; enhanced low-dose-rate sensitivity; hydrogen; interface traps; radiation effects; temperature transducer; total ionizing dose; voltage comparator;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2007.907870

Filename

4395068