DocumentCode :
996708
Title :
The Effects of Hydrogen in Hermetically Sealed Packages on the Total Dose and Dose Rate Response of Bipolar Linear Circuits
Author :
Pease, Ronald L. ; Platteter, Dale G. ; Dunham, Gary W. ; Seiler, John E. ; Adell, Philippe C. ; Barnaby, Hugh J. ; Chen, Jie
Author_Institution :
RLP Res., Los Lunas
Volume :
54
Issue :
6
fYear :
2007
Firstpage :
2168
Lastpage :
2173
Abstract :
It is demonstrated with test transistors and circuits that a small amount of hydrogen trapped in hermetically sealed packages can significantly degrade the total dose and dose rate response of bipolar linear microelectronics. In addition, we show that when exposed to an atmosphere of 100% molecular hydrogen dies with silicon nitride passivation are unaffected, whereas dies with silicon carbide or deposited oxides become very soft at high and low dose rate.
Keywords :
bipolar integrated circuits; hermetic seals; passivation; bipolar linear circuits; hermetically sealed packages; hydrogen effects; molecular hydrogen dies; silicon carbide; silicon nitride passivation; Atmosphere; Bipolar transistor circuits; Circuit testing; Degradation; Hermetic seals; Hydrogen; Linear circuits; Microelectronics; Packaging; Silicon; Dose rate; enhanced low-dose-rate sensitivity; hydrogen; interface traps; radiation effects; temperature transducer; total ionizing dose; voltage comparator;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2007.907870
Filename :
4395068
Link To Document :
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