Title :
A Generalized SiGe HBT Single-Event Effects Model for On-Orbit Event Rate Calculations
Author :
Pellish, Jonathan A. ; Reed, Robert A. ; Sutton, Akil K. ; Weller, Robert A. ; Carts, Martin A. ; Marshall, Paul W. ; Marshall, Cheryl J. ; Krithivasan, Ramkumar ; Cressler, John D. ; Mendenhall, Marcus H. ; Schrimpf, Ronald D. ; Warren, Kevin M. ; Sieraw
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN
Abstract :
This work draws on experimental and simulation results to derive a generalized SEU response model for bulk SiGe HBTs. The model was validated using published heavy ion and new proton data gathered from high-speed HBT digital logic integrated circuits fabricated in the IBM 5AM SiGe BiCMOS process. Calibrating to heavy ion data was sufficient to reproduce the proton data without further adjustment. The validated model is used to calculate upset event rates for low-earth and geosynchronous orbits under typical conditions.
Keywords :
BiCMOS logic circuits; Ge-Si alloys; aerospace instrumentation; calibration; heterojunction bipolar transistors; semiconductor heterojunctions; semiconductor materials; BiCMOS; bulk SiGe HBT; calibration; generalized SEU response model; geosynchronous orbits; heavy ion data; heterojunction bipolar transistor; high-speed HBT digital logic integrated circuits; low-earth orbits; on-orbit event rate calculations; proton data; single-event effects model; BiCMOS integrated circuits; Circuit simulation; Germanium silicon alloys; Heterojunction bipolar transistors; High speed integrated circuits; Integrated circuit modeling; Logic circuits; Protons; Silicon germanium; Single event upset; Deep trench isolation; Geant4; geosynchronous orbit; low-earth orbit; rate prediction; silicon-germanium HBT; single-event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2007.909987
