• DocumentCode
    996734
  • Title

    p-type InP grown at low temperatures by atomic layer molecular beam epitaxy (ALMBE)

  • Author

    Dotor, M.L. ; Huertas, P. ; Postigo, P.A. ; Golmayo, D. ; Briones, F.

  • Author_Institution
    Centro Nacional de Microelectron., Madrid, Spain
  • Volume
    29
  • Issue
    14
  • fYear
    1993
  • fDate
    7/8/1993 12:00:00 AM
  • Firstpage
    1270
  • Lastpage
    1271
  • Abstract
    Residual doping of InP layers grown at low temperature by atomic layer molecular beam epitaxy (ALMBE) has been reduced down to approximately 1016 cm-3 by control of phosphorus pulses, and then, p-type InP layers doped with Be have been grown at substrate temperatures of 305-340 degrees C. Epilayers show low compensation and mobilities that are comparable to bulk p-type InP.
  • Keywords
    III-V semiconductors; atomic layer epitaxial growth; beryllium; carrier density; carrier mobility; electrical conductivity of crystalline semiconductors and insulators; indium compounds; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; 305 to 340 degC; ALMBE; InP:Be; RHEED; atomic layer MBE; low temperature growth; mobilities; molecular beam epitaxy; p-type; semiconductor; substrate temperatures;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930848
  • Filename
    252424
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=996734